Abstract
During last years, semiconductor bolometers using thin films have been developed at INAOE, specifically boron-doped hydrogenated amorphous silicon films. The characteristics shown by these devices made them attractive to be used in astronomical instrumentation, mainly in two-dimentional arrays. These detector arrays used at the Large Millimeter Telescope will make possible to obtain astronomical images in millimeter and sub-millimeter wavelengths. With this in mind, we are developing a method to produce, with enough reliability, bolometer arrays at INAOE. Until now, silicon nitride diaphragm arrays, useful as radiation absorbers, have succesfully been obtained. Sizes going from one to four millimeter by element in a consistent way; however we have not tested thermometers and metallic contact deposition yet. At the same time, we are working on two possible configurations for the readout electronics; one of them using commercial components while the other will be an integrated circuit specifically designed for this application. Both versions will work below 77K.
